SODIMM Notebook Memory Kingston 4GB CL19 DDR4 2666MHz 1.2V KVR26S19S6/4

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SKU: SODIMM Notebook Memory Kingston 4GB CL19 DDR4 2666MHz 1.2V KVR26S19S6/4 , ,

Опис на производот

Description
– KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
Features
– Power Supply: VDD = 1.2V Typical
– VDDQ = 1.2V Typical
– VPP = 2.5V Typical
– VDDSPD = 2.2V to 3.6V
– Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
– Low-power auto self refresh (LPASR)
– Data bus inversion (DBI) for data bus
– On-die VREFDQ generation and calibration
– Single-rank
– On-board I2 serial presence-detect (SPD) EEPROM
– 16 internal banks; 4 groups of 4 banks each
– Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
– Selectable BC4 or BL8 on-the-fly (OTF)
– Fly-by topology
– Terminated control command and address bus
– PCB: Height 1.18” (30.00mm)
– RoHS Compliant and Halogen-Free
Specifications
– CL (IDD): 19 Cycles
– Row Cycle Time (tRCmin): 45.75ns (min)
– Refresh to Active/Refresh
– Command Time (tRFCmin): 350ns (min)
– Row Active Time (tRASmin): 32ns (min)
– Maximum Operating Power: TBD W*
– UL Rating: 94V – 0
– Operating Temperature: 0oC to +85oC
– Storage Temperature: -55oC to +100oC

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